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| TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H High-Efficiency DCDC Converter Applications Notebook PC Applications Portable-Equipment Applications * * * * * * * Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 7.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| =38 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 20 15 60 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation W Circuit Configuration 8 7 6 5 Drain power dissipation 1.0 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 146 15 0.19 150 -55 to 150 mJ A mJ C C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPC8017-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8017 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPC8017-H Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 15 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 7.5 A VOUT RL = 2 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min 30 15 1.1 19 Typ. 7.3 5.1 38 1465 175 610 4 11 10 38 25 14 4.7 5.7 7.8 Max 10 10 2.3 9.5 6.6 ns nC pF Unit A A V V m S VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V, ID = 15 A - VDD 24 V, VGS = 5 V, ID = 15 A - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 15 A, VGS = 0 V Min Typ. Max 60 -1.2 Unit A V 3 2006-11-16 TPC8017-H ID - VDS 20 10 6 5 4 3.1 3.2 3.4 3.5 4.5 3 Common source Ta = 25C Pulse test 50 10 8 6 5 3.6 3.8 4 4.5 ID - VDS 3.4 Common source Ta = 25C Pulse test Drain current ID (A) 2.9 Drain current ID (A) 16 40 3.2 12 2.8 30 3 20 2.8 10 VGS = 2.6V 8 2.7 2.6 VGS = 2.5V 4 0 0 0.2 0.4 0.6 0.8 1 0 0 0.4 0.8 1.2 1.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 40 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test 0.2 Common source Ta = 25C Pulse test 0.16 Drain current ID (A) 30 0.12 ID = 15 A 20 100 10 25 0 0 1 2 3 4 5 6 Ta = -55C 0.08 7.5 0.04 3.8 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 1000 100 Common source Ta = 25C Pulse test RDS (ON) - ID Forward transfer admittance |Yfs| 100 Ta = -55C 25 10 100 Drain-source ON-resistance RDS (ON) (m) 10 4.5 VGS = 10 V 1 Common source VDS = 10 V Pulse test 1 10 100 0.1 0.1 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPC8017-H RDS (ON) - Ta 20 Common source Pulse test 1000 Common source Ta = 25C Pulse test 100 10 3 10 4.5 IDR - VDS (A) ID = 15A Drain-source ON-resistance RDS (ON) (m) 16 12 3.8A,7.5A 8 VGS = 4.5 V Drain reverse current IDR 4 VGS = 10 V 0 -80 ID = 3.8A,7.5A,15A 1 1 VGS = 0 V 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 2.5 Vth - Ta (V) Coss (pF) Ciss 1000 2 Gate threshold voltage Vth Capacitance C 1.5 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160 100 Common source VGS==00V V VGS f = 1 MHz f = 1 MHz Ta = 25C Ta = 25C Crss 10 0.1 1 10 100 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2 (1)Device mounted on a Dynamic input/output characteristics 50 20 Common source ID = 15 A 40 Ta = 25C Pulse test 30 VDS 20 VGS 24 12 8 VDD = 6 V 12 16 (Note 2a) (Note 2b) (W) Drain-source voltage VDS (V) (1) 1.6 (2)Device mounted on a glass-epoxy board(b) 10s Drain power dissipation PD 1.2 (2) 0.8 0.4 10 4 0 0 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-16 Gate-source voltage VGS (V) glass-epoxy board(a) TPC8017-H rth - tw rth (C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 100 (Note 2a) 2b) (2) Device mounted on a glass-epoxy board (b) (1) (2) Transient thermal impedance 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 1000 Drain current ID (A) 100 ID max (Pulse) * t=1ms * 10 10ms * Single - pulse 1 Ta=25 Curves must be derated linearly with increase in 0.1 0.1 temperature. 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2006-11-16 TPC8017-H 7 2006-11-16 |
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